Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/10295
Title: Nearly amorphous to epitaxial growth of aluminum nitride films
Authors: Leung, TT
Ong, CW 
Keywords: Aluminum nitride films
Epitaxial growth
Reactive magnetron sputtering
Issue Date: 2004
Publisher: Elsevier Science Sa
Source: Diamond and related materials, 2004, v. 13, no. 9, p. 1603-1608 How to cite?
Journal: Diamond and Related Materials 
Abstract: Aluminum nitride (AlN) films were prepared by using reactive magnetron sputtering. Substrate temperature Ts, radio frequency power Pw, and substrate materials (including silicon, platinum coated silicon and sapphire) were varied as deposition parameters. Ts-Pw diagrams were worked out to illustrate how the film structure can be controlled to vary over a broad range covering nearly amorphous, polycrystalline, texture and epitaxial structures. Increases in Ts and Pw have the effects of increasing the thermal energy of the species on the substrate surface, and enhancing the crystallization of the deposits and preferential orientation of grains. Sapphire substrate has better lattice matching with the AlN structure, which further facilitates the epitaxial growth of the AlN structure.
URI: http://hdl.handle.net/10397/10295
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2004.01.015
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