Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/10251
Title: Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films
Authors: Chang, H
Sun, Z
Yuan, Q
Ding, F 
Tao, X 
Yan, F 
Zheng, Z 
Keywords: Bandgap
Field-effect
Graphene
Phototransistor
Solution processable
Issue Date: 2010
Publisher: Wiley-VCH
Source: Advanced materials, 2010, v. 22, no. 43, p. 4872-4876 How to cite?
Journal: Advanced materials 
Abstract: Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.
URI: http://hdl.handle.net/10397/10251
ISSN: 0935-9648
EISSN: 1521-4095
DOI: 10.1002/adma.201002229
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