Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/10237
Title: Effect of B 2O 3 vapor doping on the lattice parameter and electrical properties in BaTiO 3 ceramics
Authors: Qi, JQ
Wang, Y 
Chen, WP
Chan, HLW 
Keywords: BaTiO 3
Boron
Interstitial
Positive temperature coefficient resistance
Vapor doping
Issue Date: 2003
Publisher: Institute of Pure and Applied Physics
Source: Japanese journal of applied physics. Part 2, Letters, 2003, v. 42, no. 12 B, p. L1516-L1518 How to cite?
Journal: Japanese journal of applied physics. Part 2, Letters 
Abstract: The effect of boron vapor doping on the lattice structure of barium titanate-based ceramics was investigated by X-ray diffraction. Both the un-doped and boron vapor doped BaTiO 3 ceramics were found to exhibit a tetragonal phase, but the lattice parameters of the doped ceramics are larger than the parameters of the undoped one. This lattice expansion due to the vapor doping is convincing evidence that vapor doping can effectively modify the lattice structure of ceramics. The influence of boron vapor doping on the electrical properties of a barium titanate-based semiconductor was also reported.
URI: http://hdl.handle.net/10397/10237
ISSN: 0021-4922
EISSN: 1347-4065
DOI: 10.1143/JJAP.42.L1516
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