Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/10123
Title: Nonvolatile memory devices based on electrical conductance tuning in poly(N-vinylcarbazole)-graphene composites
Authors: Zhang, Q
Pan, J
Yi, X
Li, L
Shang, S 
Keywords: Conductance tuning
Graphene
Memory devices
Poly(N-vinylcarbazole)
Issue Date: 2012
Publisher: Elsevier Science Bv
Source: Organic electronics : physics, materials, applications, 2012, v. 13, no. 8, p. 1289-1295 How to cite?
Journal: Organic Electronics: physics, materials, applications 
Abstract: Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(N-vinylcarbazole) (PVK)-graphene composites, are fabricated. The current density-voltage characteristics of the fabricated device show different electrical conductance behaviors, such as insulator behavior, write-once read-many-times (WORM) memory effect, rewritable memory effect and conductor behavior, which depend on the content of graphene in the PVK-graphene composites. The OFF and ON states of the WORM and rewritable memory devices are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of -1.0 V. The memory mechanism is deduced from the modeling of the nature of currents in both states in the devices.
URI: http://hdl.handle.net/10397/10123
DOI: 10.1016/j.orgel.2012.04.012
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