Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/10053
Title: PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers
Authors: Peng, J
Lau, ST
Chao, C
Dai, JY 
Chan, HLW 
Luo, HS
Zhu, BP
Zhou, QF
Shung, KK
Issue Date: 2010
Publisher: Springer
Source: Applied physics. A, Materials science & processing, 2010, v. 98, no. 1, p. 233-237 How to cite?
Journal: Applied physics. A, Materials science & processing 
Abstract: In this work, a novel high-frequency ultrasonic transducer structure is realized by using PMNPT-on-silicon technology and silicon micromachining. To prepare the single crystalline PMNPT-on-silicon wafers, a hybrid processing method involving wafer bonding, mechanical lapping and wet chemical thinning is successfully developed. In the transducer structure, the active element is fixed within the stainless steel needle housing. The measured center frequency and -6 dB bandwidth of the transducer are 35 MHz and 34%, respectively. Owing to the superior electromechanical coupling coefficient (k t ) and high piezoelectric constant (d 33) of PMNPT film, the transducer shows a good energy conversion performance with a very low insertion loss down to 8.3 dB at the center frequency.
URI: http://hdl.handle.net/10397/10053
ISSN: 0947-8396
EISSN: 1432-0630
DOI: 10.1007/s00339-009-5381-1
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