Browsing by Keyword Gallium compounds

Showing results 1 to 19 of 19
2001Characterization of GaN thin films on HVPE GaN templatesZhu, CF; Fong, WK; Leung, BH; Chan, NH; Surya, C 
1-Jul-2003Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layersFong, WKP; Ng, SW; Leung, BH; Surya, C 
2009Characterizations of InGaN/GaN MQWs with different growth parametersLeung, KK; Fong, WK; Surya, C 
1-May-2011Degradation mechanism beyond device self-heating in high power light-emitting diodesYung, KCW ; Liem, H; Choy, HS; Lun, WK
1-Jul-2001The effects of interdiffusion on the subbands in GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs quantum well for 1.3 and 1.55 μm operation wavelengthsChan, MCY; Surya, C ; Wai, PKA 
2001Electrical properties of high quality MBE-grown GaN thin films on intermediate-temperature buffer layersFong, WK; Zhu, CF; Leung, BH; Surya, C 
2009Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectorsLui, HF; Fong, WK; Surya, C 
2010Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporationLui, HF; Leung, KK; Fong, WK; Surya, C 
23-Jun-2003Highly reflective distributed Bragg reflectors using a deeply etched semiconductor/air grating for InGaN/GaN laser diodesSaitoh, T; Kumagai, M; Wang, H; Tawara, T; Nishida, T; Akasaka, T; Kobayashi, N
19-Jul-2006Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contactsWang, RX; Xu, SJ; Djurišić, AB; Beling, CD; Cheung, CK; Cheung, CH; Fung, S; Zhao, DG; Yang, H; Tao, X 
15-May-2008Infrared luminescence and amplification properties of Bi-doped GeO₂-Ga₂O₃-Al₂O₃glassesZhou, S; Dong, H; Zeng, H; Hao, JH ; Chen, J; Qiu, J
15-Jan-2000Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al₂O₃(0001)Sundaravel, B; Luo, EZ; Xu, JB; Wilson, IH; Fong, WKP; Wang, LS; Surya, C 
15-Mar-2002Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxyLeung, BH; Fong, WKP; Zhu, CF; Surya, C 
15-Apr-2011Nitrogen doped-ZnO/n-GaN heterojunctionsChen, XY; Fang, F; Ng, AMC; Djurišić, AB; Cheah, KW; Ling, C; Chan, WK; Fong, WKP; Lui, HF; Surya, C 
1-Apr-2010Physical mechanisms for hot-electron degradation in GaN light-emitting diodesLeung, KK; Fong, WKP; Chan, PKL; Surya, C 
1-Nov-2000Piezoelectric coefficient of aluminum nitride and gallium nitrideLueng, CM; Chan, HLW ; Surya, C ; Choy, CL
3-Oct-2006Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contactsWang, RX; Xu, SJ; Shi, SL; Beling, CD; Fung, S; Zhao, DG; Yang, H; Tao, X 
15-Feb-2006A thermal model for static current characteristics of AlGaN/GaN high electron mobility transistors including self-heating effectChang, Y; Zhang, Y; Zhang, Y; Tong, KY
1-Nov-2011ZnO nanorod/GaN light-emitting diodes : the origin of yellow and violet emission bands under reverse and forward biasChen, XY; Ng, AMC; Fang, F; Ng, YH; Djurišić, AB; Tam, HL; Cheah, KW; Gwo, S; Chan, WK; Fong, WKP; Lui, HF; Surya, C